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Numéro de référence | IRF3707ZL | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95812A
IRF3707Z
IRF3707ZS
IRF3707ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 9.5m: 9.7nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707Z
D2Pak
IRF3707ZS
TO-262
IRF3707ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface
eÃJunction-to-Ambient
hJunction-to-Ambient (PCB Mount)
Notes through are on page 12
www.irf.com
Max.
30
± 20
59i
42i
230
57
28
0.38
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
0.50
–––
–––
Max.
2.653
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/4/03
http://www.Datasheet4U.com
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Pages | Pages 12 | ||
Télécharger | [ IRF3707ZL ] |
No | Description détaillée | Fabricant |
IRF3707Z | Power MOSFET ( Transistor ) | International Rectifier |
IRF3707ZCLPbF | Power MOSFET ( Transistor ) | International Rectifier |
IRF3707ZCSPbF | Power MOSFET ( Transistor ) | International Rectifier |
IRF3707ZL | Power MOSFET ( Transistor ) | International Rectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
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TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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