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IRF3707ZL fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF3707ZL
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF3707ZL fiche technique
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
PD - 95812A
IRF3707Z
IRF3707ZS
IRF3707ZL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
30V 9.5m: 9.7nC
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3707Z
D2Pak
IRF3707ZS
TO-262
IRF3707ZL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
gContinuous Drain Current, VGS @ 10V
gContinuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
eCase-to-Sink, Flat Greased Surface
Junction-to-Ambient
hJunction-to-Ambient (PCB Mount)
Notes  through ‡ are on page 12
www.irf.com
Max.
30
± 20
59i
42i
230
57
28
0.38
-55 to + 175
300 (1.6mm from case)
x x10 lbf in (1.1 N m)
Typ.
–––
0.50
–––
–––
Max.
2.653
–––
62
40
Units
V
A
W
W/°C
°C
Units
°C/W
1
12/4/03
http://www.Datasheet4U.com

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