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Numéro de référence | 20DL2CZ47A | ||
Description | HIGH EFFICIENCY DIODE STACK | ||
Fabricant | ToshibaSemiconductor | ||
Logo | |||
1 Page
20DL2CZ47A,20FL2CZ47A
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
20DL2CZ47A, 20FL2CZ47A
SWITCHING MODE POWER SUPPLY APPLICATION
CONVERTER & CHOPPER APPLICATION
Unit: mm
Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V
Average Output Rectified Current : IO = 20 A
Ultra Fast Reverse-Recovery Time : trr = 35 ns (Max)
Low Switching Losses and Low Output Noise
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Repetitive Peak
Reverse Voltage
20DL2CZ47A
20FL2CZ47A
Average Output Rectified Current
(Full Sine Waveform)
Peak One Cycle Surge Forward
Current (Non−Repetitive)
Junction Temperature
Storage Temperature Range
Screw Torque
SYMBOL
VRRM
IO
IFSM
Tj
Tstg
―
RATING
200
300
20
100 (50Hz)
110 (60Hz)
−40~150
−40~150
0.6
UNIT
V
A
A
°C
°C
N·m
JEDEC
JEITA
TOSHIBA
Weight: 2.0g
―
―
12−10C1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Peak Forward
20DL2CZ47A
Voltage
(Note 1) 20FL2CZ47A
Repetitive Peak Reverse
Current
(Note 1)
Reverse Recovery Time (Note 1)
Forward Recovery Time (Note 1)
Thermal Resistance
VFM
IFM = 10A
IRRM
trr
tfr
Rth (j−c)
VRRM = Rated
IF = 2.0A, di / dt = −50A / µs
IF = 1.0A
DC Total, Junction to Case
Note 1: A value applied to one cell.
POLARITY
MIN TYP. MAX UNIT
― ― 0.98
V
― ― 1.3
― ― 50 µA
― ― 35 ns
― ― 100 ns
― ― 3.0 °C / W
1 2004-07-07
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Pages | Pages 5 | ||
Télécharger | [ 20DL2CZ47A ] |
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