|
|
Numéro de référence | 20CTQ150PBF | ||
Description | SCHOTTKYRECTIFIER | ||
Fabricant | InternationalRectifier | ||
Logo | |||
1 Page
SCHOTTKY RECTIFIER
Bulletin PD-20648 rev. C 09/04
20CTQ150
20CTQ150S
20CTQ150-1
20 Amp
Major Ratings and Characteristics
Characteristics
Values Units
IF(AV) Rectangular
waveform
VRRM
20
150
IFSM @ tp = 5 µs sine
1030
VF @10 Apk, TJ = 125°C
(per leg)
0.66
TJ range
- 55 to 175
A
V
A
V
°C
Description/ Features
This center tap Schottky ectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175° C junction
temperature. Typical applications are in switching power
supplies, converters, free-wheeling diodes, and reverse bat-
tery protection.
175° C TJ operation
Center tap configuration
Low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
20CTQ150
Case Styles
20CTQ150S
20CTQ150-1
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-220AB
www.irf.com
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
D2PAK
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
TO-262
1
|
|||
Pages | Pages 8 | ||
Télécharger | [ 20CTQ150PBF ] |
No | Description détaillée | Fabricant |
20CTQ150PBF | SCHOTTKYRECTIFIER | InternationalRectifier |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |