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PDF SCS215AJ Data sheet ( Hoja de datos )
| Número de pieza | SCS215AJ | |
| Descripción | SiC Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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SCS215AJ
SiC Schottky Barrier Diode
VR 650V
IF 15A
QC 23nC
lFeatures
1) Shorter recovery time
2) Reduced temperature dependence
3) High-speed switching possible
lConstruction
Silicon carbide epitaxial planer Shottoky Diode
lOutline
LPT(L)
<TO-263AB>
Data Sheet
(1)
(2)
(3)
(4)
lInner circuit
(1)
(1) Cathode
(2) N / C
(3) Cathode
(4) Anode
(2) (3) (4)
lPackaging specifications
Packaging
Embossed tape
Reel size (mm)
330
Tape width (mm)
Type
Basic ordering unit (pcs)
24
1,000
Taping code
TLL
Marking
SCS215AJ
lAbsolute maximum ratings (Tj = 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Continuous forward current
Symbol
VRM
VR
IF
Surge no repetitive forward current
IFSM
Repetitive peak forward current
IFRM
Total power dissipation
PD
Junction temperature
Tj
Range of storage temperature
Tstg
*1 Tc=120°C *2 PW=8.3ms sinusoidal, Tj=25°C
*3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C
*5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C
Value
650
650
15*1
55*2
200*3
43*4
56*5
100*6
175
-55 to +175
Unit
V
V
A
A
A
A
A
W
°C
°C
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
http://www.Datasheet4U.com
2014.01 - Rev.A
1 page  
SCS215AJ
lDimensions (Unit : mm)
LPT(L)
Data Sheet
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.01 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SCS215AJ.PDF ] | |
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