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GKI10526 fiches techniques PDF

SANKEN - N Channel Trench Power MOSFET

Numéro de référence GKI10526
Description N Channel Trench Power MOSFET
Fabricant SANKEN 
Logo SANKEN 





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GKI10526 fiche technique
100 V, 20 A, 34.4 mΩ Low RDS(ON)
N ch Trench Power MOSFET
GKI10526
Features
V(BR)DSS --------------------------------100 V (ID = 100 µA)
ID ---------------------------------------------------------- 20 A
RDS(ON) ----------54.2 mΩ max. (VGS = 10 V, ID = 9.3 A)
Qg------- 9.0 nC (VGS = 4.5 V, VDS = 50 V, ID = 11.9 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Package
DFN 5 × 6
8pin
DDDD
8pin
DDDD
SSSG
1pin
GSSS
1pin
Not to scale
Equivalent circuit
D(5)(6)(7)(8)
G(4)
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Test conditions
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
VDS
VGS
TC = 25 °C,
ID
with infinite heatsink
TA = 25 °C,
mounted on PCB*
IDM
PW 100µs
Duty cycle 1 %
IS
ISM
PW 100µs
Duty cycle 1 %
VDD = 50V, L = 1 mH,
EAS
IAS = 6.8 A, unclamped,
RG = 4.7 Ω,
Refer to Figure 1
IAS
TC = 25 °C,
PD
with infinite heatsink
TA = 25 °C,
mounted on PCB*
TJ
Storage Temperature Range
TSTG
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
S(1)(2)(3)
Rating
100
±20
20
4
40
20
40
47
13.3
46
3.1
150
55 to 150
GKI10526-DS Rev.1.6
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
Unit
V
V
A
A
A
A
A
mJ
A
W
W
°C
°C
1

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