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PDF IR21571S Data sheet ( Hoja de datos )
| Número de pieza | IR21571S | |
| Descripción | FULLY INTEGRATED BALLAST CONTROL IC | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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Data Sheet PD No. 60179 revM
Not recommended for new design:
please use IRS21571D
IR21571(S) & (PbF)
FULLY INTEGRATED BALLAST CONTROL IC
Features
• Programmable preheat time & frequency
• Programmable ignition ramp
• Protection from failure-to-strike
• Lamp filament sensing & protection
• Protection from operation below resonance -
0.2V CS threshold sync’d to falling edge on LO
• Protection from low-line condition
• Automatic restart for lamp exchange
Description
• Thermal overload protection
• Programmable deadtime
• Integrated 600V level-shifting gate driver
• Internal 15.6V zener clamp diode on VCC
• Micropower startup (150uA)
• Latch immunity protection on all leads
• ESD protection on all leads
• Parts also available LEAD-FREE
Packages
The IR21571 is a fully integrated, fully protected 600V ballast control IC designed
to drive virtually all types of rapid start fluorescent lamp ballasts. Externally pro-
grammable features such as preheat time & frequency, ignition ramp characteris-
tics, and running mode operating frequency provide a high degree of flexibility for
the ballast design engineer. Comprehensive protection features such as protec-
tion from failure of a lamp to strike, filament failures, low dc bus conditions, thermal
overload, or lamp failure during normal operation, as well as an automatic restart
function, have been included in the design. The heart of this control IC is a variable
frequency oscillator with externally programmable deadtime. Precise control of a
50% duty cycle is accomplished using a T-flip-flop. The IR21571 is available in both
16 pin DIP and 16 pin narrow body SOIC packages.
16 Lead SOIC
(narrow body)
16 Lead PDIP
Typical Connection
+ Rectified AC Line
+ VBUS
R2
R1
C1
CPH
CRAMP RPH
RT RRUN
CSTART RSTART
CT
ROC
RDT
VDC
1
CPH
2
RPH
3
RT
4
RUN
5
CT
6
DT
7
OC
8
HO
16
VS
15
VB
14
VCC
13
COM
12
LO
11
CS
10
SD
9
RSupply
RGHS
CBS
DBOOT
CVCC
R3 RGLS
R4
C2 RCS
CBLOCK LRES
CSNUBBER
D1
D2
R5
CRES
VBUS return
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1
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1 page  
IR21571(S) & (PbF)
Electrical Characteristics (cont.)
VCC = VBS = VBIAS = 14V +/- 0.25V, RT = 40.0kΩ, CT = 470 pF, RPH and RUN leads no connection, VCPH = 0.0V,
RDT = 6.1kΩ, ROC = 20.0kΩ, VCS = 0.5V, VSD = 0.0V, CL = 1000pF, TA = 25oC unless otherwise specified.
RUN Characteristics
Symbol Definition
Min. Typ. Max. Units Test Conditions
IRUNLK Open circuit RUN lead leakage current
VRUNFLT Fault-mode RUN lead voltage
— 0.01 0.1
µA VRUN = 5V
— 0 50 mV SD = 5V, CS = 2V,
or Tj > TSD
Protection Circuitry Characteristics
Symbol Definition
Min.
VSD+
VSDHYS
VCS+
VCS-
TCS
VDC+
VDC-
TSD
Rising shutdown lead threshold voltage
1.9
Shutdown pin threshold hysteresis
100
Over-current sense threshold voltage
0.99
Under-current sense threshold voltage
0.15
Over-current sense propogation delay
100
Low VBUS/rectified line input upper threshold
Low VBUS/rectified line input lower threshold
Thermal shutdown junction temperature
5.0
2.85
150
Typ.
2.1
150
1.10
0.2
250
5.20
3.3
160
Max.
2.3
200
1.21
0.26
400
5.6
3.3
170
Units Test Conditions
V
mV
V
nsec Delay from CS to LO
V
oC Note 4
Gate Driver Output Characteristics
Symbol Definition
VOL
VOH
tr
tf
Low-level output voltage
High level output voltage
Turn-on rise time
Turn-off fall time
Min.
—
—
55
35
Typ.
0
0
85
45
Max.
100
100
150
100
Units Test Conditions
mV
Io = 0
VBIAS - VO, Io = 0
nsec
Note 4: When the IC senses an overtemperature condition (Tj > 160ºC), the IC is latched off. In order to reset this
Fault Latch, the SD lead must be cycled high and then low, or the VCC supply to the IC must be cycled below
the falling undervoltage lockout threshold (VCCUV-).
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5
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5 Page 
Preheat
Ignition
Ramp
Run
IR21571(S) & (PbF)
The following graphs, Figures 8 and 9, illustrate the
relationship between the effective RT resistance (i.e.,
the parallel combination of resistors which programs
the CT capacitor charging current) and the operating
frequency.
150
FREQ
(KHz)
100
CT=220pF,RDT=11K
CT=470pF,RDT=6.2K
CT=1nF,RDT=3K
Figure 7: Lamp filament voltage during the
preheat, ignition ramp and run modes.
50
The Preheat Time is programmed by means of the
preheat capacitor, CPH, an internal 1µA current
source, and an internal threshold on the CPH lead of
4.0V, according to the following formula:
tPH = 4.7E6 ⋅ CPH, or
CPH = 213E - 9 ⋅ tPH
At the end of the Preheat Time, the internal, open-
drain transistor holding the RPH lead to ground turns
off, and the voltage on this lead charges exponentially
up to the RT lead potential. During this Ignition Ramp
Mode, the output frequency exponentially decays to
a minimum value. The rate of decay of this frequency
is a function of the RPH * CPH time constant. Because
the Ignition Ramp Mode ends when the voltage on
the CPH lead reaches 5.15V, the Ignition Ramp Mode
is always 1/4th as long as the preheat time.
When the CPH lead reaches 5.15V, an open-drain
transistor on the RUN lead turns on, and the external
RRUN resistor is then in parallel with the RT resistor.
The Run Mode operating frequency is therefore a
function of the parallel combination of RRUN and RT,
and this means that the operating power of the lamp
can be programmed by means of RRUN.
www.irf.com
0
0 5 10 15 20 25 30 35 40
RT (K ohms)
Figure 8: fosc versus effective RT (tDEAD = 2.0 usec)
250
200
150
FREQ
(KHz)
100
CT=220pF, RDT=5.6K
CT=470pF, RDT=2.7K
CT=1nF, RDT=1.2K
50
0
0 5 10 15 20 25 30 35 40
RT (K ohms)
Figure 9: fosc versus effective RT (tDEAD = 1.0 usec)
11
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11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet IR21571S.PDF ] | |
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