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PDF C1518 Data sheet ( Hoja de datos )
| Número de pieza | C1518 | |
| Descripción | NPN Transistor - 2SC1518 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Transistor
2SC1518
Silicon NPN epitaxial planer type
For high-frequency bias oscillation of tape recorders
For DC-DC converter
s Features
q Low collector to emitter saturation voltage VCE(sat).
q Satisfactory operation performances and high efficiency with a
low-voltage power supply.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
25
20
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
˚C
˚C
5.9±0.2
Unit: mm
4.9±0.2
0.7±0.1
2.54±0.15
0.45+–00..21
1.27
1.27
123
0.45+–00..21
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min typ max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Base to emitter saturation voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
ICBO
ICEO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VBE(sat)
VCE(sat)
fT
Cob
VCB = 25V, IE = 0
100 nA
VCE = 20V, IB = 0
1 µA
IC = 10µA, IE = 0
25
V
IC = 1mA, IB = 0
20
V
IE = 10µA, IC = 0
5
V
VCE = 2V, IC = 500mA*2
90 330
VCE = 2V, IC = 1A*2
50 100
IC = 500mA, IB = 50mA*2
1.2 V
IC = 1A, IB = 50mA*2
0.5 V
VCB = 10V, IE = –50mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz
12 20 pF
*2 Pulse measurement
*1hFE1 Rank classification
Rank
Q
R
hFE1 90 ~ 155 130 ~ 220
S
185 ~ 330
1
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| PDF Descargar | [ Datasheet C1518.PDF ] | |
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