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PDF 20NK50Z Data sheet ( Hoja de datos )
| Número de pieza | 20NK50Z | |
| Descripción | STFI20NK50Z | |
| Fabricantes | STMicroelectronics | |
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STFI20NK50Z
N-channel 500 V, 0.23 Ω, 17 A Zener-protected SuperMESH™
Power MOSFET in I²PAKFP package
Datasheet — production data
Features
Type
VDSS
STFI20NK50Z 500 V
RDS(on)
max
< 0.27 Ω
ID
17 A
PTOT
40 W
■ Fully insulated and low profile package with
increased creepage path from pin to heatsink
plate
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized
Applications
■ Switching applications
Description
This device is an N-channel Zener-protected
Power MOSFET developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well-
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
1
2
3
I2PAKFP
(TO-281)
Figure 1. Internal schematic diagram
D(2)
G(1)
S(3)
AM01476v1
Table 1. Device summary
Order codes
Marking
STFI20NK50Z
20NK50Z
Package
I2PAKFP
(TO-281)
Packaging
Tube
March 2012
This is information on a product in full production.
Doc ID 019007 Rev 3
1/13
www.st.com
13
http://www.Datasheet4U.com
1 page  
STFI20NK50Z
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
ISD
ISDM(1)
VSD(2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17 A, VGS = 0
ISD = 17 A,
di/dt = 100 A/µs
VR = 100 V
(see Figure 17)
ISD = 17 A,
di/dt = 100 A/µs
VR = 100 V, Tj = 150 °C
(see Figure 17)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Pulse width limited by safe operating area.
Min.
-
-
Typ.
Max. Unit
17 A
68 A
1.6 V
355
- 3.90
22
ns
µC
A
440
- 5.72
26
ns
µC
A
Table 8. Gate-source Zener diode
Symbol
Parameter
Test conditions
V(BR)GSO
Gate-source breakdown voltage
(ID = 0)
IGS= ± 1mA
Min. Typ. Max. Unit
30 -
V
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Doc ID 019007 Rev 3
5/13
http://www.Datasheet4U.com
5 Page 
STFI20NK50Z
Table 9. I2PAKFP (TO-281) mechanical data
Dim.
Min.
mm
Typ.
A 4.40
B 2.50
D 2.50
D1 0.65
E 0.45
F 0.75
F1
G 4.95
H 10.00
L1 21.00
L2 13.20
L3 10.55
L4 2.70
-
L5 0.85
L6 7.30
Figure 21. I2PAKFP (TO-281) drawing
Package mechanical data
Max.
4.60
2.70
2.75
0.85
0.70
1.00
1.20
5.20
10.40
23.00
14.10
10.85
3.20
1.25
7.50
Doc ID 019007 Rev 3
REV!
11/13
http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet 20NK50Z.PDF ] | |
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