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IRF7665S2TRPbF Datasheet دیتاشیت PDF دانلود

دیتاشیت - IRF - DIGITAL AUDIO MOSFET

شماره قطعه IRF7665S2TRPbF
شرح مفصل DIGITAL AUDIO MOSFET
تولید کننده IRF 
آرم IRF 


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IRF7665S2TRPbF شرح
DIGITAL AUDIO MOSFET
PD - 96239
IRF7665S2TRPbF
IRF7665S2TR1PbF
Features
Key parameters optimized for Class-D audio amplifier
applications
Low RDS(on) for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
Can deliver up to 100W per channel into 8with no heatsink Š
Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
· Lead-Free (Qualified up to 260°C Reflow)
· Industrial Qualified
Key Parameters
VDS 100
RDS(on) typ. @ VGS = 10V
Qg typ.
RG(int) typ.
51
8.3
3.5
V
m:
nC
SB DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
SB SC
M2 M4
L4 L6 L8
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF7665S2TR/TR1PbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower
parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance im-
proves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red
or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and
processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving
thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TA = 25°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
PD @TC = 25°C
PD @TC = 100°C
PD @TA = 25°C
TJ
TSTG
Maximum Power Dissipation
jPower Dissipation
jPower Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJ-Can
RθJ-PCB
Parameter
eJunction-to-Ambient
hJunction-to-Ambient
iJunction-to-Ambient
jkJunction-to-Can
Junction-to-PCB Mounted
Notes  through Š are on page 2
www.irf.com
Max.
100
± 20
14.4
10.2
4.1
58
30
15
2.4
0.2
-55 to + 175
Typ.
–––
12.5
20
–––
1.4
Max.
63
–––
–––
5.0
–––
Units
V
A
W
W/°C
°C
Units
°C/W
1
07/02/09
http://www.Datasheet4U.com

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