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PDF DKI06261 Data sheet ( Hoja de datos )
| Número de pieza | DKI06261 | |
| Descripción | N Channel Trench Power MOSFET | |
| Fabricantes | SANKEN | |
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60 V, 25 A, 16.7 mΩ Low RDS(ON)
N ch Trench Power MOSFET
DKI06261
Features
V(BR)DSS --------------------------------- 60 V (ID = 100 µA)
ID ---------------------------------------------------------- 25 A
RDS(ON) -------- 21.9 mΩ max. (VGS = 10 V, ID = 12.5 A)
Qg------- 6.6 nC (VGS = 4.5 V, VDS = 30 V, ID = 15.8 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
GDS
(3) (2) (1)
SDG
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 30 V, L = 1 mH,
IAS = 4.2 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
60
± 20
25
50
25
50
18
10
32
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
DKI06261-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
1 page  
DKI06261
40
30
20
10
0
0
PD-Ta Derating
50 100
Ta (℃)
150
SAFE OPERATING AREA
100
ID(pulse) MAX
PT=100μs
10
PT=1m s
1
1 shot
Tc=25℃
0.1
0.1 1 10
VDS (V)
100
1.E+01
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+00
1.E-01
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
P.T. (sec)
1.E+00
Tc = 25℃
1shot
VDS < 10V
1.E+01
1.E+02
DKI06261-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet DKI06261.PDF ] | |
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