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Numéro de référence | DKI04077 | ||
Description | N Channel Trench Power MOSFET | ||
Fabricant | SANKEN | ||
Logo | |||
1 Page
40 V, 47 A, 6.9 mΩ Low RDS(ON)
N ch Trench Power MOSFET
DKI04077
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 47 A
RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)
Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
GDS
(3) (2) (1)
SDG
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
PW ≤ 100µs
Duty cycle ≤ 1 %
VDD = 20 V, L = 1 mH,
IAS = 6.8 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
40
± 20
47
93
47
93
47
13.3
37
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
DKI04077-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
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Pages | Pages 8 | ||
Télécharger | [ DKI04077 ] |
No | Description détaillée | Fabricant |
DKI04077 | N Channel Trench Power MOSFET | SANKEN |
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