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DKI04077 fiches techniques PDF

SANKEN - N Channel Trench Power MOSFET

Numéro de référence DKI04077
Description N Channel Trench Power MOSFET
Fabricant SANKEN 
Logo SANKEN 





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DKI04077 fiche technique
40 V, 47 A, 6.9 mΩ Low RDS(ON)
N ch Trench Power MOSFET
DKI04077
Features
V(BR)DSS --------------------------------- 40 V (ID = 100 µA)
ID ---------------------------------------------------------- 47 A
RDS(ON) ----------8.9 mΩ max. (VGS = 10 V, ID = 23.3 A)
Qg------- 7.9 nC (VGS = 4.5 V, VDS = 20 V, ID = 29.6 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
GDS
(3) (2) (1)
SDG
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Not to scale
Absolute Maximum Ratings
Unless otherwise specified, TA = 25 °C
Parameter
Symbol
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
IDM
IS
ISM
Single Pulse Avalanche Energy
EAS
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
IAS
PD
TJ
TSTG
Test conditions
TC = 25 °C
PW 100µs
Duty cycle 1 %
PW 100µs
Duty cycle 1 %
VDD = 20 V, L = 1 mH,
IAS = 6.8 A, unclamped,
RG = 4.7 Ω
Refer to Figure 1
TC = 25 °C
Rating
40
± 20
47
93
47
93
47
13.3
37
150
55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
DKI04077-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1

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