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PDF FCH072N60F Data sheet ( Hoja de datos )

Número de pieza FCH072N60F
Descripción N-Channel MOSFET
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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FCH072N60F
N-Channel SuperFET® II FRFET® MOSFET
600 V, 52 A, 72 mΩ
December 2013
Features
• 650 V @ TJ = 150°C
• Typ. RDS(on) = 65 mΩ
• Ultra Low Gate Charge (Typ. Qg = 165 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF)
• 100% Avalanche Tested
• RoHS Compliant
Description
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new
high voltage super-junction (SJ) MOSFET family that is utilizing
charge balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching perfor-
mance, dv/dt rate and higher avalanche energy. Consequently,
SuperFET II MOSFET is very suitable for the switching power
applications such as PFC, server/telecom power, FPD TV
power, ATX power and industrial power applications. SuperFET
II FRFET® MOSFET’s optimized body diode reverse recovery
performance can remove additional component and improve
system reliability.
D
G
D
S
TO-247
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- DC
- AC
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
MOSFET dv/dt
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(f > 1 Hz)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH072N60F
600
±20
±30
52
33
156
1128
9.5
4.8
100
50
481
3.85
-55 to +150
300
FCH072N60F
0.26
40
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2013 Fairchild Semiconductor Corporation
FCH072N60F Rev. C4
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

1 page




FCH072N60F pdf
Typical Performance Characteristics (Continued)
Figure 12. Transient Thermal Response Curve
0.5
0.5
0.1
0.2
0.1
0.05
0.02
0.01
Single pulse
0.01
10-5
10-4
PDM
*Notes:
t1
t2
1. ZθJC(t) = 0.26oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
10-3
10-2
Rt1e, cRteacntagnuglaulraPr uPluslseeDDuurraattiioonn [[sseecc]]
10-1
100
©2013 Fairchild Semiconductor Corporation
FCH072N60F Rev. C4
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com

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