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Numéro de référence | 2SC2230 | ||
Description | NPN Transistor | ||
Fabricant | Changjiang | ||
Logo | |||
1 Page
TO-92MOD PLASTIC-ENCAPSULATE TRANSISTORS
2SC2230 TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.8W (Tamb=25ºC)
Collector Current
ICM: 0.1A
Collector-base voltage
V (BR) CBO: 200V
Operating and storage junction temperature range
TJ, Tstg: -55ºC to + 150ºC
TO-92 MOD
1. EMITTER
2. COLLECTOR
3. BASE
ELECTRICAL CHARACTERISTICS
(Tamb=25ºC unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V (BR) CBO
V (BR) CEO
V (BR) EBO
ICBO
ICER
IEBO
hFE
VCEsat
VBEsat
fT
Test Conditions
IC= 100 µA, IE=0
IC= 10mA, IB=0
IE= 10 µA, IC=0
VCB= 200V, IE=0
VCB= 160V, REB=10MΩ
VEB= 5V, IC=0
VCE= 10V, IC= 10mA
IC= 50A, IB= 5mA
IC= 1mA, VCE= 10V
VCE= 10V, IC= 10mA
MIN
200
160
5
120
50
MAX
0.1
10
0.1
400
0.5
0.7
UNIT
V
V
V
µA
µA
µA
V
V
MHz
CLASSIFICATION OF h FE
Rank
Range
Y
120-240
GR
200-400
Rua Juquiá, 217 - Vila Antonieta - S.B.C. - Cep:09629-040 - SP - Brasil
Tel: (11) 4367-7411 - Fax: (11) 4367-7416 - www.voltts.com.br - [email protected]
Pág. 1/3
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Pages | Pages 3 | ||
Télécharger | [ 2SC2230 ] |
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