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PDF FF200R12KS4 Data sheet ( Hoja de datos )
| Número de pieza | FF200R12KS4 | |
| Descripción | IGBT Module | |
| Fabricantes | Eupec | |
| Logotipo |  |
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Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF200R12KS4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Tvj= 25° C
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
TC = 70 °C
TC = 25 °C
tP = 1 ms, TC = 80°C
Gesamt-Verlustleistung
total power dissipation
TC=25°C, Transistor
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
tP = 1 ms
Grenzlastintegral der Diode
I2t - value, Diode
VR = 0V, tp = 10ms, TVj = 125°C
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
VCES
IC,nom.
IC
ICRM
Ptot
VGES
IF
IFRM
I2t
VISOL
1200
200
275
400
1,4
+/- 20V
200
400
18
2,5
V
A
A
A
kW
V
A
A
k A2s
kV
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
IC = 200A, VGE = 15V, Tvj = 25°C
IC = 200A, VGE = 15V, Tvj = 125°C
IC = 8mA, VCE = VGE, Tvj = 25°C
Gateladung
gate charge
VGE = -15V...+15V
Eingangskapazität
input capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Rückwirkungskapazität
reverse transfer capacitance
f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
VCE = 1200V, V GE = 0V, Tvj = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
VCE = 0V, VGE = 20V, Tvj = 25°C
prepared by: MOD-D2; Martin Knecht
approved by: SM TM; Wilhelm Rusche
date of publication: 2003-01-11
revision: 3.0
VCE sat
min.
-
-
typ.
3,2
3,85
max.
3,7
-
VGE(th)
4,5
5,5
6,5
V
V
V
QG - 2,1 - µC
Cies - 13 - nF
Cres - 0,85 - nF
ICES
-
-
5 mA
IGES
-
- 400 nA
1 (8)
DB_FF200R12KS4_3.0
2003-01-11
Free Datasheet http://www.Datasheet4U.com
1 page  
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FF200R12KS4
Übertragungscharakteristik (typisch)
Transfer characteristic (typical)
400
IC = f (VGE)
VCE = 20V
350
300
250
Tvj = 25°C
Tvj = 125°C
200
150
100
50
0
5 6 7 8 9 10
VGE [V]
11
12
Durchlaßkennlinie der Inversdiode (typisch)
Forward characteristic of inverse diode (typical)
400
350
300
250
Tvj = 25°C
Tvj = 125°C
200
150
100
50
0
0,0 0,5 1,0 1,5 2,0
VF [V]
I F = f (VF)
2,5 3,0
5 (8)
DB_FF200R12KS4_3.0
2003-01-11
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FF200R12KS4.PDF ] | |
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