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PDF K2480 Data sheet ( Hoja de datos )
| Número de pieza | K2480 | |
| Descripción | MOSFET ( Transistor ) - 2SK2480 | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2480
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2480 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
PACKAGE DIMENSIONS
(in millimeter)
FEATURES
• Low On-Resistance
RDS (on) = 4.0 Ω (VGS = 10 V, ID = 2.0 A)
• Low Ciss Ciss = 900 pF TYP.
• High Avalanche Capability Ratings
• Isolated TO-220 Package
10.0±0.3
4.5±0.2
3.2±0.2
2.7±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID(DC)
±3.0
A
Drain Current (pulse)*
ID(pulse) ±12
A
Total Power Dissipation (Tc = 25 ˚C)
PT1
35 W
Total Power Dissipation (TA = 25 ˚C)
PT2
2.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 3.0 A
Single Avalanche Energy**
EAS 37.1 mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
0.7±0.1
2.54
1.3±0.2
1.5±0.2
2.54
123
2.5±0.1
0.65±0.1
1. Gate
2. Drain
3. Source
MP-45F (ISOLATED TO-220)
Drain
Gate
Body
Diode
Source
Document No. D10272EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
©
1995
Free Datasheet http://www.Datasheet4U.com
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
VGS = 10 V
0 ID = 2 A
–50 0 50 100 150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
Ciss
100
10
1.0
Coss
Crss
10 100 1000
VDS - Drain to Source Voltage - V
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0 10
ID - Drain Current - A
100
2SK2480
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1
0.1
0
VGS = 10 V
VGS = 0 V
0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tr
td(on)
tf
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1.0 10 100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 3.0 A
14
12
10 VDD = 450 V
300 V
8 150 V
6
4
2
0
4 8 12 16 20 24 28
Qg - Gate Charge - nC
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K2480.PDF ] | |
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