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PDF K15T120 Data sheet ( Hoja de datos )
| Número de pieza | K15T120 | |
| Descripción | IGBT | |
| Fabricantes | Infineon | |
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Hay una vista previa y un enlace de descarga de K15T120 (archivo pdf) en la parte inferior de esta página. Total 15 Páginas | ||
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TrenchStop® Series
IKW15T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP313D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW15T120 1200V 15A
1.7V
150C K15T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
30
15
45
45
30
15
45
20
10
110
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com
1 page  
TrenchStop® Series
IKW15T120
40A
30A TC=80°C
20A TC=110°C
Ic
10A
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 56)
tp=2µs
10A 10µs
50µs
1A
150µs
500µs
0,1A
1V
DC 20ms
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 150C;VGE=15V)
100W
80W
20A
60W
40W
10A
20W
0W
25°C
Figure 3.
50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 150C)
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
IFAG IPC TD VLS
5
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com
5 Page 
TrenchStop® Series
IKW15T120
600ns
500ns
400ns
300ns
200ns
TJ=150°C
100ns
0ns
200A/µs
400A/µs
600A/µs
TJ=25°C
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
TJ=150°C
3µC
2µC TJ=25°C
1µC
0µC
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
TJ=150°C
30A
25A
20A TJ=25°C
15A
10A
5A
0A
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
-300A/µs
-200A/µs
TJ=25°C
TJ=150°C
-100A/µs
-0A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=15A,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
11
Rev. 2.4 12.06.2013
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet K15T120.PDF ] | |
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