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2N7632UC fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence 2N7632UC
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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2N7632UC fiche technique
PD-97268A
2N7632UC
IRHLUC7670Z4
RADIATION HARDENED 60V, Combination 1N-1P-CHANNEL
LOGIC LEVEL POWER MOSFET
TECHNOLOGY
SURFACE MOUNT (LCC-6)
™
Product Summary
Part Number Radiation Level
IRHLUC7670Z4 100K Rads (Si)
IRHLUC7630Z4 300K Rads (Si)
RDS(on)
0.75
1.60
0.75
1.60
ID
0.89A
-0.65A
0.89A
-0.65A
International Rectifier’s R7TM Logic Level Power MOSFETs
provide simple solution to interfacing CMOS and TTL control
circuits to power devices in space and other radiation
environments.The threshold voltage remains within
acceptable operating limits over the full operating
temperature and post radiation.This is achieved while
maintaining single event gate rupture and single event
burnout immunity.
The device is ideal when used to interface directly with most
logic gates, linear IC’s, micro-controllers, and other device
types that operate from a 3.3-5V source. It may also be
used to increase the output current of a PWM, voltage
comparator or an operational amplifier where the logic level
drive signal is available.
CHANNEL
N
P
N
P
LCC-6
Features:
n 5V CMOS and TTL Compatible
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C Continuous Drain Current
ID@ VGS = ±4.5V, TC=100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Pre-Irradiation
N-Channel
P-Channel
0.89 -0.65
0.56
-0.41
3.56 -2.6
1.0 1.0
0.01
0.01
±10 ±10
20 Á
34 ²
0.89
-0.65
0.1 0.1
4.7 Â
-5.6 ³
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (for 5s)
0.2 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
10/18/10
Free Datasheet http://www.Datasheet4U.com

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