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PDF IRGSL4062DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGSL4062DPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 97355B
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGS4062DPbF
IRGSL4062DPbF
Features
• Low VCE (ON) Trench IGBT Technology
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for 4X rated current (ILM)
• Positive VCE (ON) Temperature co-efficient
• Ultra fast soft Recovery Co-Pak Diode
• Tight parameter distribution
• Lead Free Package
C
G
E
n-channel
C
VCES = 600V
IC = 24A, TC = 100°C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.65V
C
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
Low VCE (ON) and Low Switching losses
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
E
G
D2Pak
IRGS4062DPbF
E
C
G
TO-262
IRGSL4062DPbF
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
cClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
600
48
24
96
96
48
24
96
±20
±30
250
125
-55 to +175
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
80
Max.
0.60
1.53
–––
–––
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com
12/07/09
Free Datasheet http://www.Datasheet4U.com
1 page  
1800
1600
1400
1200
1000
800
600
400
200
0
0
EOFF
EON
10 20 30 40 50 60
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1600
1400
1200
1000
800
EON
EOFF
600
400
200
0
0 25 50 75 100 125
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
40
RG = 10Ω
35
30
RG = 22Ω
25
RG = 47Ω
20
RG = 100Ω
15
10
0
10 20 30 40 50
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
60
IRGS/SL4062DPbF
1000
tdOFF
100
tdON
tF
10 tR
1
10 20 30 40 50
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
tdOFF
100
tdON
tF
tR
10
0
25 50 75 100 125
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
45
40
35
30
25
20
15
10
5
0 25 50 75 100
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
125
www.irf.com
5Free Datasheet http://www.Datasheet4U.com
5 Page 
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IRGS/SL4062DPbF
TO-262 Part Marking Information
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/pkhexfet.html
www.irf.com
11Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRGSL4062DPBF.PDF ] | |
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