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PDF IRGS4064DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGS4064DPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (on) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175 °C
• 5μs SCSOA
• Square RBSOA
• 100% of The Parts Tested for (ILM)
• Positive VCE (on) Temperature Coefficient.
• Ultra Fast Soft Recovery Co-pak Diode
• Tighter Distribution of Parameters
• Lead-Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due
to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
• Low EMI
Absolute Maximum Ratings
Parameter
VCES
IC@ TC = 25°C
IC@ TC = 100°C
ICM
ILM
IF@TC=25°C
IF@TC=100°C
IFM
VGE
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
cClamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC =25°
PD @ TC =100°
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
eRθJC
eRθJC
Junction-to-Case - IGBT
Junction-to-Case - Diode
RθCS
RθJA
Case-to-Sink, flat, greased surface
eJunction-to-Ambient, typical socket mount
Wt Weight
PD - 96424
IRGS4064DPbF
C
G
E
n-channel
VCES = 600V
IC = 10A, TC = 100°C
tsc > 5µs, Tjmax = 175°C
VCE(on) typ. = 1.6V
C
G
Gate
E
C
G
D2Pak
C
Collector
E
Emitter
Max.
600
20
10
40
40
20
10
40
±20
±30
101
50
-55 to + 175
Units
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
1.5
Max.
1.49
3.66
–––
40
Units
°C/W
g
1 www.irf.com
02/16/12
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1 page  
600
500
400
300 EOFF
200
EON
100
0
0 4 8 12 16 20 24
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 22Ω; VGE = 15V.
350
EOFF
300
250
200 EON
150
100
50
0
0
25 50 75 100 125
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 10A; VGE = 15V
24
20
RG =10 Ω
16
RG =22 Ω
12 RG =47 Ω
8 RG = 100 Ω
4
0
0 4 8 12 16 20
IF (A)
www.irf.com
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
24
IRGS4064DPbF
1000
100 tdOFF
tF
tdON
10 tR
1
0 4 8 12 16 20
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 22Ω; VGE= 15V
1000
24
100 tdOFF
tdON
tF
tR
10
0 25 50 75 100 125
RG (Ω)
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 10A; VGE= 15V
20
16
12
8
4
0
0 25 50 75 100 125
RG (Ω)
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 10A
5
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5 Page 
IRGS4064DPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
TRL
10.90 (.429)
10.70 (.421)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
16.10 (.634)
15.90 (.626)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
4.72 (.136)
4.52 (.178)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/2012
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRGS4064DPBF.PDF ] | |
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