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Numéro de référence | IRFSL7430PBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
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1 Page
Applications
l Brushed motor drive applications
l BLDC motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC inverters
Benefits
l Improved gate, avalanche and dynamic dV/dt
ruggedness
l Fully characterized capacitance and avalanche
SOA
l Enhanced body diode dV/dt and dI/dt capability
l Lead-free
StrongIRFET
IRFS7430PbF
IRFSL7430PbF
HEXFET® Power MOSFET
D VDSS
40V
RDS(on) typ.
max.
0.97m:
1.2m:
cG ID (Silicon Limited) 426A
S ID (Package Limited) 195A
DD
S
G
D2Pak
IRFS7430PbF
S
D
G
TO-262
IRFSL7430PbF
G
Gate
D
Drain
S
Source
Base Part Number
IRFSL7430PbF
IRFS7430PbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFSL7430PbF
IRFS7430PbF
IRFS7430TRLPbF
6.0
ID = 100A
4.0
TJ = 125°C
2.0
TJ = 25°C
0.0
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2013 International Rectifier
500
Limited By Package
400
300
200
100
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
Submit Datasheet Feedback
November 19, 2013
Free Datasheet http://www.Datasheet4U.com
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Pages | Pages 11 | ||
Télécharger | [ IRFSL7430PBF ] |
No | Description détaillée | Fabricant |
IRFSL7430PBF | Power MOSFET ( Transistor ) | International Rectifier |
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