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Numéro de référence | IRFP3077PBF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best RDS(on) in TO-247
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
G
PD - 97126
IRFP3077PbF
HEXFET® Power MOSFET
D VDSS
RDS(on) typ.
max.
75V
2.8m:
3.3m:
ID (Silicon Limited) 200A c
S ID (Package Limited) 120A
D
S
GD
TO-247AC
G
Gate
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current d
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dV/dt
Peak Diode Recovery f
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR Avalanche Current c
EAR Repetitive Avalanche Energy g
Thermal Resistance
Symbol
Parameter
RθJC
RθCS
RθJA
www.irf.com
Junction-to-Case j
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient j
D
Drain
S
Source
Max.
200c
140c
120
850
340
2.3
± 20
2.5
-55 to + 175
300
10lbxin (1.1Nxm)
200
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.24
–––
Max.
0.44
–––
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1
3/3/08
Free Datasheet http://www.Datasheet4U.com
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Pages | Pages 8 | ||
Télécharger | [ IRFP3077PBF ] |
No | Description détaillée | Fabricant |
IRFP3077PBF | Power MOSFET ( Transistor ) | International Rectifier |
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