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PDF IRFI4510GPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFI4510GPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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PD - 97790
IRFI4510GPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
VDSS
RDS(on)
ID
typ.
max.
HEXFET® Power MOSFET
100V
10.7m
13.5m
35A
DD
G
G
Gate
S
D
G
S TO-220AB Full-Pak
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
fRJC
fRJA
Junction-to-Case
Junction-to-Ambient
Max.
35
24
180
42
0.28
±20
206
-55 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
3.6
65
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
www.irf.com
1
05/15/12
Free Datasheet http://www.Datasheet4U.com
1 page  
IRFI4510GPbF
10
D = 0.50
1 0.20
0.1
0.01
0.10
0.05
0.02
0.01
J J
1 1
R1R1
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iiRiiRi
R2R2
2 2
0.001
1E-006
1E-005
0.0001
0.001
0.01
R3R3
R4R4
C
Ri (°C/W)
1.34312
1.47895
i (sec)
0.470619
0.072697
3 3
4 4
0.62114 0.006558
0.15442 0.000152
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1 1 10
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
10 0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
1 0.10
0.1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.01
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E+01
1.0E+02
250
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
200 ID = 21A
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
www.irf.com
5
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