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IRFI4410ZGPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRFI4410ZGPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRFI4410ZGPBF fiche technique
PD - 96372
IRFI4410ZGPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
VDSS
RDS(on)
ID
typ.
max.
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l Halogen-Free
G
D
S
HEXFET® Power MOSFET
100V
7.9m:
9.3m:
43A
D
S
D
G
TO-220AB Full-Pak
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
EAS (Thermally limited)
TJ
TSTG
Gate-to-Source Voltage
dSingle Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
fRθJC
Junction-to-Case
fRθJA Junction-to-Ambient
Max.
43
30
170
47
0.3
±30
310
-55 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
–––
Max.
3.2
65
Units
A
W
W/°C
V
mJ
°C
Units
°C/W
www.irf.com
1
05/18/11
Free Datasheet http://www.Datasheet4U.com

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