|
|
PDF K3324 Data sheet ( Hoja de datos )
| Número de pieza | K3324 | |
| Descripción | MOSFET ( Transistor ) - 2SK3324 | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de K3324 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3324
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3324 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
Designed for high voltage applications such as switching
power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
2SK3324
PACKAGE
TO-3P
FEATURES
• Low gate charge :
QG = 32 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance :
RDS(on) = 2.8 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
900
±30
±6
±18
120
3.0
–55 to + 150
6.0
21.6
V
V
A
A
W
W
°C
A
mJ
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 %
2. Starting Tch = 25 °C, VDD = 150 V, RG = 25 Ω, VGS = 20 V → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14203EJ2V0DS00 (2nd edition)
Date Published January 2000 NS CP(K)
Printed in Japan
The mark • shows major revised points.
©
1999
Free Datasheet http://www.Datasheet4U.com
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
6
5
4
3
2
1
VGS = 10 V
ID = 3.0 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
100 Coss
10
0.1
Crss
1 10
VDS - Drain to Source Voltage - V
100
10000
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0 V
100
10
0.1
1 10
IF - Drain Current - A
100
2SK3324
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10
VGS = 10 V
1
0V
0.1
0
0.5 1 1.5
VSD - Source to Drain Voltage - V
1000
SWITCHING CHARACTERISTICS
100
10
1
0.1
tr
tf
td(off)
td(on)
1 10
ID - Drain Current - A
VDD = 150 V
VGS = 10 V
RG = 10 Ω
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
16
ID = 6.0 A
12
VDD = 450 V
300 V
8 150 V
4
0 10 20 30 40
QG - Gate Charge - nC
Data Sheet D14203EJ2V0DS00
5
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3324.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| K332 | MOSFET ( Transistor ) - 2SK332 |  Sanyo Semicon Device |
| K3322 | MOSFET ( Transistor ) - 2SK3322 | NEC |
| K3324 | MOSFET ( Transistor ) - 2SK3324 | NEC |
| K3326 | MOSFET ( Transistor ) - 2SK3326 | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |