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PDF 2SC2216 Data sheet ( Hoja de datos )
| Número de pieza | 2SC2216 | |
| Descripción | NPN Plastic Encapsulated Transistor | |
| Fabricantes | Secos | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 2SC2216 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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Elektronische Bauelemente
2SC2216
0.05 A , 50 V
NPN Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Amplifier dissipation NPN Silicon
TO-92
GH
J
AD
B
K
E CF
Base
Emitter
Collector
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
50
45
4
50
300
125, -55~125
Base
Emitter
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut – Off Current
Emitter Cut – Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter voltage
Transition Frequency
Collector Output Capacitance
V(BR)CBO
50
-
-
V IC=100μA, IE=0
V(BR)CEO
45
-
-
V IC=10mA, IB=0
V(BR)EBO
4
-
-
V IE=100μA, IC=0
ICBO - - 0.1 μA VCB=50V, IE=0
IEBO - - 0.1 μA VEB=3V, IC=0
hFE 40 - 140
VCE=12.5V, IC=12.5mA
VCE(sat) - - 0.2 V IC=15mA, IB=1.5mA
VBE(sat) - - 1.5 V IC=15mA, IB=1.5mA
fT
300 -
- MHz VCE=12.5V, IC=12.5mA
Cob - - 2 pF VCB=10V, IE=0, f=30MHz
http://www.SeCoSGmbH.com/
17-Feb-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2
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| Páginas | Total 2 Páginas | |
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