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PDF 3CG1980 Data sheet ( Hoja de datos )
| Número de pieza | 3CG1980 | |
| Descripción | PNP Silicon Transistor | |
| Fabricantes | Kodenshi | |
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2SA1980
PNP Silicon Transistor
Description
• General small signal amplifier
PIN Connection
E
Features
• Low collector saturation voltage
: VCE(sat)=-0.3V(Max.)
• Low output capacitance : Cob=4pF(Typ.)
• Complementary pair with 2SC5343
B
TO-92
C
Ordering Information
Type NO.
Marking
Package Code
2SA1980
上海元佐电子Absolute Maximum Ratings
021-54953990Characteristic
Collector-base voltage
Collector-emitter voltage
021-54950919Emitter-base voltage
Collector current
Collector power dissipation
www.yozo.hkJunction temperature
Storage temperature range
A1980
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
TO-92
Rating
-50
-50
-5
-150
500
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
BVCBO IC=-100μA, IE=0
Collector-emitter breakdown voltage BVCEO IC=-1mA, IB=0
Emitter-base breakdown voltage
BVEBO IE=-10μA, IC=0
Collector cut-off current
ICBO
VCB=-50V, IE=0
Emitter cut-off current
DC current gain
IEBO
hFE*
VEB=-5V, IC=0
VCE=-6V, IC=-2mA
Collector-emitter saturation voltage
VCE(sat) IC=-100mA, IB=-10mA
Transition frequency
fT VCE=-10V, IC=-1mA
Collector output capacitance
Noise figure
Cob VCB=-10V, IE=0, f=1MHz
NF
VCE=-6V, IC=-0.1mA
f=1KHz, Rg=10KΩ
*: hFE rank / O : 70~140, Y : 120~240, G : 200~400, L : 300~700. WWW.YOZO.HK
KSD-T0A016-001
(Ta=25°C)
Min. Typ. Max. Unit
-50 - - V
-50 - - V
-5 - - V
- - -0.1 μA
- - -0.1 μA
70 - 700 -
- - -0.3 V
80 -
- MHz
- 4 7 pF
- - 10 dB
1
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