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PDF 2SA1980 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1980 | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | Secos | |
| Logotipo |  |
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Elektronische Bauelemente
2SA1980
-150 mA, -50 V
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low collector saturation voltage: VCE(sat) =-0.3V(Max.)
Low output capacitance : Cob=4pF (Typ.)
Complements of the 2SC5343
CLASSIFICATION OF hFE
Product-Rank 2SA1980-O
Range
70~140
2SA1980-Y
120~240
2SA1980-G
200~400
2SA1980-L
300~700
TO-92
GH
J
AD
B
K
E CF
1 Emitter
2 Collector
3 Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min. Max.
4.40 4.70
4.30 4.70
12.70
-
3.30 3.81
0.36 0.56
0.36 0.51
1.27 TYP.
1.10
-
2.42 2.66
0.36 0.76
Collector
2
3Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-50
-50
-5
-150
625
150, -55~150
Unit
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Noise Figure
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
NF
-50
-50
-5
-
-
70
-
80
-
-
- - V IC=-100µA, IE=0
- - V IC=-10mA, IB=0
- - V IE=-10µA, IC=0
- -0.1 µA VCB=-50 V, IE=0
- -0.1 µA VEB=-5 V, IC=0
- 700
VCE=-6V, IC=-2mA
- -0.30 V IC=-100mA, IB=-10mA
- - MHz VCE=-10V, IC =-1mA
4 7 pF VCB=-10V, IE=0, f=1MHz
- 10 dB VCE=-6V, IC=-0.1mA, f=1KHz,
RS=10KΩ
http://www.SeCoSGmbH.com/
14-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
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