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Numéro de référence | D2142 | ||
Description | NPN Transistor - 2SD2142 | ||
Fabricant | SeCoS | ||
Logo | |||
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Elektronische Bauelemente
2SD2142
NPN Plastic
Plastic-Encapsulate Transistor
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
FEATURES
z Darlington connection for a high hFE
z High input impedance
3.COLLECTOR
1.BASE
2.EMITTER
MARKING:R1M
A
L
3
Top View
12
BS
VG
D
MAXIMUM RATINGS* TA=25oC unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ, Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
C
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
J
Value
40
32
12
300
200
-55~150
Units
V
V
V
mA
mW
oC
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=100μA,IC=0
ICBO
VCB=30V,IE=0
IEBO VEB=12V,IC=0
hFE VCE=3V,IC=100mA
VCE(sat) IC=200mA,IB=0.2mA
fT VCE=5V,IC=10mA,f=100MHz
Cob VCB=10V,IE=0,f=1MHz
MIN TYP MAX UNIT
40 V
32 V
12 V
0.1 μA
0.1 μA
5000
1.4 V
200 MHz
2.5 pF
http://www.SeCoSGmbH.com
01-Jun-2007 Rev. A
Any changing of specification will not be informed individual
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Free Datasheet http://www.Datasheet4U.com
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Pages | Pages 2 | ||
Télécharger | [ D2142 ] |
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