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PDF D1581 Data sheet ( Hoja de datos )
| Número de pieza | D1581 | |
| Descripción | NPN Transistor - 2SD1581 | |
| Fabricantes | NEC | |
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DATA SHEET
SILICON TRANSISTOR
2SD1581
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
The 2SD1581 is a single type super high hFE transistor and low
collector saturation voltage and low power loss. This transistor is
ideal for use in high current drives such as mortars, relays, and
ramps.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Ultra high hFE
hFE = 800 to 3200 (@ VCE = 5.0 V, IC = 500 mA)
• Low collector saturation voltage
VCE(sat) = 0.18 V TYP. (@ IC = 1.0 A, IB = 10 mA)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)*
PT
Tj
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings
30
25
15
2.0
3.0
1.0
150
−55 to +150
Unit
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
MIN.
Collector cutoff current
ICBO VCB = 30 V, IE = 0
Emitter cutoff current
IEBO VEB = 10 V, IC = 0
DC current gain
hFE1 VCE = 5.0 V, IC = 500 mA
DC current gain
hFE2 VCE = 5.0 V, IC = 2.0 mA
DC base voltage
VBE VCE = 5.0 V, IC = 300 mA
Collector saturation voltage VCE(sat) IC = 1.0 A, IB = 10 mA
Base saturation voltage
VBE(sat) IC = 1.0 A, IB = 10 mA
Output capacitance
Cob VCB = 10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT VCE = 10 V, IE = −500 mA
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
* 800
* 400
* 600
*
*
150
hFE1/hFE CLASSIFICATION M : 800 to 1600 L : 1200 to 2400 K : 2000 to 3200
TYP.
1500
660
0.18
0.83
26
350
MAX.
100
100
3200
700
0.30
1.2
35
Unit
nA
nA
−
−
mV
V
V
pF
MHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16197EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928
Free Datasheet http://www.Datasheet4U.com
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