|
|
PDF FGP20N60UFD Data sheet ( Hoja de datos )
| Número de pieza | FGP20N60UFD | |
| Descripción | 20A Field Stop IGBT | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FGP20N60UFD (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
FGP20N60UFD
600V, 20A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =1.8V @ IC = 20A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Induction Heating, UPS, SMPS, PFC
October 2008
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Induction
Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
C
1 TO-220
1.Gate 2.Collector 3.Emitter
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
± 20
40
20
60
165
66
-55 to +150
-55 to +150
300
Typ.
-
-
-
Max.
0.76
2.51
62.5
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
FGP20N60UFD Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
12
8
40A
4 20A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
2500
2000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
1500
Cies
1000
500
Coes
Cres
0
0.1 1 10
Collector-Emitter Voltage, VCE [V]
Figure 11. SOA Characteristics
30
100
10µs
10 100µs
1ms
10 ms
1 DC
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
8
20A
4 40A
IC = 10A
0
0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
300V
9 VCC = 100V
200V
6
3
0
0 20 40 60 80
Gate Charge, Qg [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
100
10
5
0
tr
td(on)
Common Emitter
VCC = 400V, VGE = 15V
IC = 20A
TC = 25oC
TC = 125oC
10 20 30 40 50
Gate Resistance, RG [Ω]
60
FGP20N60UFD Rev. A
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FGP20N60UFD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FGP20N60UFD | 20A Field Stop IGBT | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |