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2N7002W fiches techniques PDF

MCC - N-Channel Enhancement Mode Field Effect Transistor

Numéro de référence 2N7002W
Description N-Channel Enhancement Mode Field Effect Transistor
Fabricant MCC 
Logo MCC 





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2N7002W fiche technique
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

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2N7002W
Features
Low ON-Resistance
Low Input Capacitance
Low Gate Threshold Voltage
Fast Switching Speed
Low Input/Output Leakage
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Mechanical Data
Halogen free available upon request by adding suffix "-HF"
Case: SOT-323, Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking: K72
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 625K/W Junction To Ambient
Parameter
Symbol Value Unit
Drain-Source-Voltage
VDSS
Drain-Gate Voltage RGSƙ1.0MVDGR
60
60
V
V
Gate-Source-Voltage Continuous
Pulsed
VGSS
±20
±40
V
Drain Current (Note 1) Continuous
Continuous @ 100+
Pulsed
ID
115
73 mA
800
Total Power Dissipation (Note 1)
Derating above TA = 25+
PD
200 mW
1.60 mW/+
Note: 1. Valid provided that terminals are kept at specified ambient
temperature.
2. Pulse width ƙ300µs, duty cycle ƙ2%
N-Channel
Enhancement Mode
Field Effect Transistor
SOT-323
A
D
D
BC
GS
FE
G HJ
K
DIMENSIONS
INCHES
MM
DIM MIN
MAX MIN MAX
A .071 .087 1.80 2.20
B .045 .053 1.15 1.35
C .083 .096 2.10 2.45
D
.026 Nominal
0.65Nominal
E .047 .055 1.20 1.40
F .012 .016 .30 .40
G .000
.004 .000
.100
H .035 .039 .90 1.00
J .004 .010 .100 .250
K .006 .016 .15 .40
Suggested Solder
Pad Layout
r 0.70
NOTE
0.90
1.90
0.65
0.65
Revision: C
www.mccsemi.com
1of 4
2013/09/24
Free Datasheet http://www.Datasheet4U.com

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