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PDF B1254 Data sheet ( Hoja de datos )
| Número de pieza | B1254 | |
| Descripción | PNP Transistor - 2SB1254 | |
| Fabricantes | Panasonic Semiconductor | |
| Logotipo |  |
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Power Transistors
2SB1254
Silicon PNP epitaxial planar type Darlington
For power amplification
Complementary to 2SD1894
Unit: mm
s Features
q Optimum for 60W HiFi output
q High foward current transfer ratio hFE
q Low collector to emitter saturation voltage VCE(sat): < –2.5V
q Full-pack package which can be installed to the heat sink with
one screw
15.0±0.3
11.0±0.2
φ3.2±0.1
5.0±0.2
3.2
2.0±0.2
2.0±0.1
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
1.1±0.1
5.45±0.3
10.9±0.5
0.6±0.2
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
–160
–140
–5
–12
–7
70
3
150
–55 to +150
s Electrical Characteristics (TC=25˚C)
V
V
V
A
A
W
˚C
˚C
123
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
Internal Connection
C
B
E
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
ICBO
ICEO
IEBO
VCEO
hFE1
hFE2*
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
Conditions
VCB = –160V, IE = 0
VCE = –140V, IB = 0
VEB = –5V, IC = 0
IC = –30mA, IB = 0
VCE = –5V, IC = –1A
VCE = –5V, IC = –6A
IC = –6A, IB = –6mA
IC = –6A, IB = –6mA
VCE = –10V, IC = – 0.5A, f = 1MHz
IC = –6A, IB1 = –6mA, IB2 = 6mA,
VCC = –50V
min
140
2000
5000
typ max Unit
–100 µA
–100 µA
–100 µA
V
30000
–2.5 V
–3.0 V
20 MHz
1.0 µs
1.5 µs
1.2 µs
*hFE2 Rank classification
Rank
Q
P
hFE2 5000 to 15000 8000 to 30000
1
Free Datasheet http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet B1254.PDF ] | |
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