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NEC - MOSFET ( Transistor ) - 2SK3304

Numéro de référence K3304
Description MOSFET ( Transistor ) - 2SK3304
Fabricant NEC 
Logo NEC 





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K3304 fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a
Low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching
power supply.
ORDERING INFORMATION
PART NUMBER
2SK3304
PACKAGE
TO-3P
FEATURES
Low gate charge :
QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A)
Gate voltage rating : ±30 V
Low on-state resistance :
RDS(on) = 2.0 MAX. (VGS = 10 V, ID = 4.0 A)
Avalanche capability ratings
(TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS(AC)
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT
Total Power Dissipation (TA = 25°C)
PT
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Tstg
IAS
EAS
900
±30
±7
±21
130
3.0
–55 to + 150
7
147
V
V
A
A
W
W
°C
A
mJ
Notes 1. PW 10 µs, Duty cycle 1 %
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13992EJ1V0DS00 (1st edition)
Date Published June 2000 NS CP(K)
Printed in Japan
©
2000
Free Datasheet http://www.Datasheet4U.com

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