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Numéro de référence | C3195 | ||
Description | NPN silicon | ||
Fabricant | FGX | ||
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1 Page
■■APPLICATION:POWER AMPLIFIER APPLICATION、
SWITCHING APPLICATION.
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER
SYMBOL RATING UNIT
Collector-base voltage
VCBO
40
V
Collector-emitter voltage
VCEO
30
V
Emitter-base voltage
VEBO
4
V
Collector current
IC 20 mA
Collector Power Dissipation
PC 400 mW
Junction Temperature
TJ 150 ℃
Storage Temperature Range
Tstg ﹣55~150 ℃
C3195
—NPN silicon —
■■ ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITION
DC Current Gain
hFE 40
200 VCE= 6V,Ic= 1mA
Collector Cut-off Current
ICBO
0.5 µA VCB= 40V,IE=0
Emitter Cut-off Current
IEBO
0.5 µA VEB= 4V,Ic=0
Collector-Base Breakdown Voltage BVCBO 40
V Ic= 0.1mA,IE=0
Collector-Emitter Breakdown Voltage BVCEO 30
V Ic= 1mA,IB=0
Emitter-Base Breakdown Voltage BVEBO 4
V IE= 0.1mA,Ic=0
Collector-Emitter Saturation Voltage VCE(sat)
0.2 V
Ic= 15mA,IB= 1.5mA
Gain bandwidth product
fT
550 MHz Ic= 1mA,VCE= 6V
Common Base Output Capacitance Cob
0.7 PF VCB= 6V, IE=0, f = 1MHz
Power Gain
GP 18 dB VCE= 6V,IE= -1mA,f= 100MHz
Noise Figure
NF
2.5 5.0 dB
VCE= 6V,IE= -1mA,f= 100MHz
■■hFE Classification
Classification
R
hFE 40~80
O
70~140
Y
100~200
Free Datasheet http://www.Datasheet4U.com
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Pages | Pages 1 | ||
Télécharger | [ C3195 ] |
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