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FIR8N60FG fiches techniques PDF

First Semiconductor - Silicon N-Channel Power MOSFET

Numéro de référence FIR8N60FG
Description Silicon N-Channel Power MOSFET
Fabricant First Semiconductor 
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FIR8N60FG fiche technique
Silicon N-Channel Power MOSFET
VDSS
ID
PD(TC=25)
RDS(ON)
600 V
7A
30 W
1.10
Features
z Fast Switching
z ESD Improved Capability
z Low Gate Charge (Typical Data:21nC)
z Low Reverse transfer capacitances(Typical:15pF)
z 100% Single Pulse avalanche energy Test
Applications
Power switch circuit of adaptor and charger.
FIR8N60FG
PIN Connection TO-220F
G
DS
D
G
S
Marking Diagram
YAWW
FIR8N60F
Y = Year
A = Assembly Location
WW = Work Week
FIR8N60F = Specific Device Code
AbsoluteTc= 25unless otherwise specified
Symbol Parameter
VDSS
ID
IDMa1
VGS
EAS a2
EAR a1
IAR a1
dv/dt a3
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current TC = 100 °C
Pulsed Drain Current
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Energy ,Repetitive
Avalanche Current
Peak Diode Recovery dv/dt
Power Dissipation
Derating Factor above 25°C
VESD(G-S)
TJTstg
TL
Gate source ESD (HBM-C= 100pF, R=1.5k)
Operating Junction and Storage Temperature Range
MaximumTemperature for Soldering
@ 2011 Copyright By American First Semiconductor
Rating
600
7
4.5
28
±20
550
54
10.4
5.0
100
0.80
3000
150–55 to 150
300
Units
V
A
A
A
V
mJ
mJ
A
V/ns
W
W/
V
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