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G60N100CE fiches techniques PDF

Taiwan Semiconductor - TSG60N100CE

Numéro de référence G60N100CE
Description TSG60N100CE
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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G60N100CE fiche technique
TO-264
Pin Definition:
1. Gate
2. Collector
3. Emitter
TSG60N100CE
N-Channel IGBT with FRD.
PRODUCT SUMMARY
VCES (V)
VGES (V)
1000
±20
IC (A)
60
General Description
The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.
Features
Block Diagram
1000V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Ordering Information
Part No.
TSG60N100CE C0
Package
TO-264
Packing
25pcs / Tube
NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Symbol
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
TC=25oC
TC=100oC
VCES
VGES
IC
Pulsed Collector Current *
Diode Continuous Forward Current (TC=100)
Max Power Dissipation
TJ=25oC
TJ=100oC
Operating Junction Temperature
Storage Temperature Range
* Repetitive rating: Pulse width limited by max. junction temperature
ICM
IF
PD
TJ
TSTG
Limit
1000
±20
60
42
200
15
208
83
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
W
ºC
oC
1/9
Version: B12
Free Datasheet http://www.Datasheet4U.com

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