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PDF 15N10 Data sheet ( Hoja de datos )
| Número de pieza | 15N10 | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | Secos | |
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Elektronische Bauelemente
SSD15N10
15A, 100V, RDS(ON) 110mΩ
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SSD15N10 provide the designer with the best
combination of fast switching. The TO-252 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
FEATURES
RDS(on) ≦ 100mΩ @ VGS = 10V
Super high density cell design for extremely low RDS(on)
Exceptional on-resistance and maximum DC current
capability
MARKING
15N10
Date Code
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13’ inch
TO-252(D-Pack)
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.4
6.8 J
2.30 REF.
B 5.20 5.50 K 0.70 0.90
C 2.20 2.40 M 0.50 1.1
D 0.45 0.58 N 0.9 1.6
E 6.8 7.3 O 0 0.15
F 2.40 3.0 P 0.43 0.58
G 5.40 6.2
H 0.8 1.20
Drain
Gate
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±20
Continuous Drain Current
Pulsed Drain Current 1
TC=25°C
TC=70°C
ID
IDM
15
13.8
24
Power Dissipation
TC=25°C
TA=25°C
Operating Junction and Storage Temperature Range
PD
TJ, TSTG
44.6
2
-55 ~ 150
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient (PCB
mount) 3
RθJA
62.5
Maximum Thermal Resistance Junction-Case
RθJC
2.8
Source
Unit
V
V
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
07-Mar-2013 Rev. E
Any changes of specification will not be informed individually.
Page 1 of 4
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1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 15N10.PDF ] | |
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