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PDF K3759 Data sheet ( Hoja de datos )
| Número de pieza | K3759 | |
| Descripción | MOSFET ( Transistor ) - 2SK3759 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK3759
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS )
2SK3759
Switching Regulator Applications
unit
• Low drain-source ON resistance: RDS (ON) = 0.75 (typ.)
• High forward transfer admittance: |Yfs| = 6.5S (typ.)
• Low leakage current: IDSS = 100 A (VDS = 500 V)
• Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA)
3.84 0.2
3.84 0.2
1010.5.5 mmaax x
44 .. 77 mmaxax
1.3
1.3
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
ID P
PD
EA S
IAR
EAR
Tc h
Tstg
500
500
±30
8
32
74
48
8
7.4
150
-55~150
Thermal Characteristics
Characteristics
Symbol
Max
V
V
V
W
mJ
A
mJ
°C
°C
Unit
11..55mmaxax
0.81
0.81 max
00..4455
2.25.544
1 23
2.7
2.7
1. Gate
2. Drain(HEAT SINK)
3. Source
JEDEC
SC-46
JEITA
TO-220AB
TOSHIBA
Weight : 2.0g(typ.)
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
1.68 °C/W
83.3 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 1.28 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
2
1
3
1 2004-02-26
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2SK3759
rth – tw
10
1
Duty=0.5
0.2
0.1
0.1
0.01
10
0.05
0.02
0.01
100
SINGLE PULSE
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.68°C/W
1 10 100
1
PULSE WIDTH tw (s)
10
SAFE OPERATING AREA
100
ID max ( PULSED) *
10 ID max ( CONTINUOUS) *
100 µs *
1 ms *
DC OPERATION
1 Tc = 25°C
SINGLE NONREPETITIVE PULSE
0.1 Tc=25
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
0.01
1
10
VDSS max
100
1000
DRAIN-SOURCE VOLTAGE VDS (V)
EA S – Tch
60
50
40
30
20
10
0
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
TEST CIRCUIT
WAVE FORM
RG = 25 Ω
VDD = 90 V, L = 1.28 mH
ÅAS=
1
2
⋅
L
⋅
I2
⋅
BVDSS
BVDSS − VDD
5 2004-02-26
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3759.PDF ] | |
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