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IRF6728MTRPBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF6728MTRPBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF6728MTRPBF fiche technique
PD - 97568
IRF6728MPbF
IRF6728MTRPbF
HEXFET® Power MOSFET plus Schottky Diode ‚
l RoHS Compliant Containing No Lead and Halogen Free
l Integrated Monolithic Schottky Diode

Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
l Low Profile (<0.7 mm)
30V max ±20V max 1.8mΩ@ 10V 2.8mΩ@ 4.5V
l Dual Sided Cooling Compatible 
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
l Ultra Low Package Inductance
l Optimized for High Frequency Switching 
28nC 8.7nC 3.1nC 29nC 22nC 1.8V
l Ideal for CPU Core DC-DC Converters
l Optimized for Sync. FET socket of Sync. Buck Converter
S
l Low Conduction and Switching Losses
l Compatible with existing Surface Mount Techniques 
DG
D
S
l 100% Rg tested
MX
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6728MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6728MPbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6728MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
23
18 A
140
180
230 mJ
18 A
10
ID = 23A
8
6
4 TJ = 125°C
2 TJ = 25°C
0
2468
10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
14.0
12.0 ID= 18A
10.0
8.0
VDS= 24V
VDS= 15V
VDS= 6V
6.0
4.0
2.0
0.0
0
20 40 60 80
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 1.37mH, RG = 50Ω, IAS = 18A.
1
9/24/10
Free Datasheet http://www.Datasheet4U.com

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