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IRF6614PBF fiches techniques PDF

International Rectifier - Power MOSFET ( Transistor )

Numéro de référence IRF6614PBF
Description Power MOSFET ( Transistor )
Fabricant International Rectifier 
Logo International Rectifier 





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IRF6614PBF fiche technique
l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD -97090
IRF6614PbF
IRF6614TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
40V max ±20V max 5.9m@ 10V 7.1m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
19nC 6.0nC 1.4nC 5.5nC 9.5nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
ST
DirectFET™ ISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6614PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to
achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET
package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-
red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and pro-
cesses. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
thermal resistance by 80%.
The IRF6614PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest
generation of processors operating at higher frequencies. The IRF6614PbF has been optimized for parameters that are critical in
synchronous buck operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses in the control FET
socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
40 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
20
16
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
ID = 12.7A
12
10 ID= 10.2A
8
±20
12.7
10.1
55
102
22
10.2
VDS= 32V
VDS= 20V
A
mJ
A
12 TJ = 125°C 6
8 TJ = 25°C
4
2
4
2.0 4.0 6.0 8.0 10.0
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
0
0 10 20 30 40 50
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.43mH, RG = 25, IAS = 10.2A.
1
5/5/06
Free Datasheet http://www.Datasheet4U.com

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