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PDF IRGP4640-EPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4640-EPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRGP4640PbF
IRGP4640-EPbF
VCES = 600V
IC = 40A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR
CC
C
tSC ≥ 5µs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 24A
Applications
• Inverters
• UPS
• Welding
G
E
n-channel
G
Gate
GC E
TO-247AC
IRGP4640PbF
C
Collector
GC E
TO-247AD
IRGP4640-EP
E
Emitter
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5µs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4640PbF
IRGP4640-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4640PbF
IRGP4640-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
cPulse Collector Current, VGE = 15V
dClamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TST G
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
eRθJC Junction-to-Case
RθCS Case-to-Sink (flat, greased surface)
RθJA Junction-to-Ambient (typical socket mount)
Max.
600
65
40
72
96
±20
±30
250
125
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
–––
Max.
0.60
–––
40
Units
V
A
V
W
°C
Units
°C/W
1
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IRGP4640PbF/IRGP4640-EPbF
120
100
TJ = 25°C
80 TJ = 175°C
60
40
20
0
0 5 10 15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
1000
tdOFF
100
tdON
tF
10 tR
1
10 20 30 40 50
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
1800
1600
1400
1200
1000
800
600
400
200
0
0
EOFF
EON
10 20 30 40 50 60
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
1600
1400
1200
1000
800
EON
EOFF
600
400
200
0
0 25 50 75 100 125
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
16 280
tdOFF
14 240
12 200
100
tdON
tF
tR
10
0
25 50 75 100 125
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 24A; VGE = 15V
10 160
8 120
6 80
4 40
8 10 12 14 16 18
VGE (V)
Fig. 17 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
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October 29, 2013
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5 Page 
IRGP4640PbF/IRGP4640-EPbF
Qualification Information†
Qualification Level
Moisture Sensitivity Level
ESD
Human Body Model
Charged Device Model
RoHS Compliant
Industrial
(per International Rectifier’s internal guidelines)
TO-247AC
N/A
TO-247AD
N/A
Class H1C (+/- 2000V)††
(per JEDEC JESD22-A114)
Class C5 (+/- 1000V)††
(per JEDEC JESD22-C101)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Highest passing voltage.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11 www.irf.com © 2013 International Rectifier
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October 29, 2013
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11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRGP4640-EPBF.PDF ] | |
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