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PDF IRGP4266-EPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4266-EPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRGP4266PbF
IRGP4266-EPbF
VCES = 650V
IC = 90A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 75A
Applications
Industrial Motor Drive
Inverters
UPS
Welding
Features
Low VCE(ON) and switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5.5µs short circuit SOA
Lead-Free, RoHS compliant
C
G
E
n-channel
G
Gate
Insulated Gate Bipolar Transistor
GG
E
C
G
IRGP4266PbF
TO-247AC
C
Collector
E
C
G
IRGP4266-EPbF
TO-247AD
E
Emitter
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4266PbF
IRGP4266-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
Tube
25
25
Orderable Part Number
IRGP4266PbF
IRGP4266-EPbF
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
Continuous Collector Current
ICM Pulse Collector Current, VGE=20V
ILM Clamped Inductive Load Current, VGE=20V
VGE Continuous Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
140
90
300
300
±20
450
230
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
RJC
RCS
RJA
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.33
–––
–––
Units
°C/W
1 www.irf.com © 2012 International Rectifier
December 13, 2012
Free Datasheet http://www.Datasheet4U.com
1 page  
300
250
200
TJ = 25°C
TJ = 175°C
150
100
50
0
4 6 8 10 12 14 16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
IRGP4266PbF/IRGP4266-EPbF
18000
16000
14000
12000
10000
EON
8000
6000
4000
EOFF
2000
0
20 40 60 80 100 120 140 160
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
12000
tdOFF
100
tdON
tF
tR
10
0
20 40 60 80 100 120 140 160
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V
10000
1000
tdOFF
100
tR
tF
tdON
10
0
20 40 60 80 100
RG ()
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
5 www.irf.com © 2012 International Rectifier
8000
4000
EON
EOFF
0
0 20 40 60 80 100
RG ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 400V, ICE = 75A; VGE = 15V
20
Tsc
15
400
Isc
300
10 200
5 100
00
8 10 12 14 16
VGE (V)
Fig. 17 - VGE vs. Short Circuit Time
VCC = 400V; TC = 150°C
December 13, 2012
Free Datasheet http://www.Datasheet4U.com
5 Page 
IRGP4266PbF/IRGP4266-EPbF
Qualification Information†
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial†
(per JEDEC JESD47F) ††
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
11 www.irf.com
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245,USA
Visit us at www.irf.com for sales contact information.
© 2012 International Rectifier
December 13, 2012
Free Datasheet http://www.Datasheet4U.com
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRGP4266-EPBF.PDF ] | |
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