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IRGP4063D1-EPBF fiches techniques PDF

International Rectifier - INSULATED GATE BIPOLAR TRANSISTOR

Numéro de référence IRGP4063D1-EPBF
Description INSULATED GATE BIPOLAR TRANSISTOR
Fabricant International Rectifier 
Logo International Rectifier 





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IRGP4063D1-EPBF fiche technique
  IRGP4063D1PbF
IRGP4063D1-EPbF
VCES = 600V
IC = 60A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
 C
G
G 
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 48A
Applica ons 
 Industrial Motor Drive 
 Inverters 
 UPS  
 Welding 
G
E
n-channel
G
Gate
E
C
G
IRGP4063D1PbF 
C
Collector
E
C
G
 IRGP4063D1EPbF 
E
Emitter
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
5µs short circuit SOA
Lead-free, RoHS compliant
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4063D1PbF
IRGP4063D1-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4063D1PbF
IRGP4063D1-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
600 V
100
60
200 A
192
30
15
120
±20 V
±30
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
330
170
-40 to +175
300 (0.063 in. (1.6mm) from case)
W
°C
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
  
 
Parameter
Min. Typ.
Max. Units
RJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT)
RJC (Diode) Thermal Resistance Junction-to-Case-(each Diode)
RCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
––– –––
––– –––
––– 0.24
––– –––
0.45
2.4
–––
°C/W
40
1 www.irf.com © 2013 International Rectifier
June 24, 2013
Free Datasheet http://www.Datasheet4U.com

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