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Número de pieza | IRG7PH50UPBF | |
Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRG7PH50UPBF (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
No Preview Available ! INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
Applications
• U.P.S
• Welding
• Solar inverter
• Induction heating
PD - 97549
IRG7PH50UPbF
IRG7PH50U-EP
C
G
E
n-channel
VCES = 1200V
IC = 90A, TC = 100°C
TJ(max) =175°C
VCE(on) typ. = 1.7V
CC
GC E
TO-247AC
IRG7PH50UPbF
GC E
TO-247AD
IRG7PH50U-EP
G
Gate
C
Collector
E
Emitter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
fThermal Resistance Junction-to-Case-(each IGBT) TO-247AC
fThermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
Max.
1200
140
90
50
150
200
±30
556
278
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.27
–––
–––
Units
V
A
V
W
°C
Units
°C/W
www.irf.com
07/28/2010
Free Datasheet http://www.Datasheet4U.com
1 page IRG7PH50UPbF/IRG7PH50U-EP
200 12000
150
100 TJ = 25°C
TJ = 175°C
50
10000
8000
6000
4000
2000
EON
EOFF
0
02468
VGE, Gate-to-Emitter Voltage (V)
Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 30µs
10
1000
tdOFF
tF
100
tdON
10
0
tR
20 40 60 80 100
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
10000
0
0 20 40 60 80 100
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200µH; VCE = 600V, RG = 5.0Ω; VGE = 15V
16000
14000
12000
EOFF
10000
8000
EON
6000
4000
2000
0
0 20 40 60 80 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
www.irf.com
1000
tdOFF
tF
100 tR
tdON
10
0
20 40 60 80 100
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200µH; VCE = 600V, ICE = 50A; VGE = 15V
5Free Datasheet http://www.Datasheet4U.com
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet IRG7PH50UPBF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRG7PH50UPBF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
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