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PDF IRG4RC10SDPBF Data sheet ( Hoja de datos )
| Número de pieza | IRG4RC10SDPBF | |
| Descripción | Standard Speed CoPack IGBT | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95192A
IRG4RC10SDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Standard Speed CoPack
IGBT
Features
C
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard TO-252AA package
• Lead-Free
Benefits
G
E
n-channel
VCES = 600V
VCE(on) typ. = 1.10V
@VGE = 15V, IC = 2.0A
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
D-PAK
TO-252AA
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
600
14
8.0
18
18
4.0
16
± 20
38
15
-55 to +150
V
A
V
W
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
–––
–––
–––
0.3 (0.01)
3.3
7.0 °C/W
50
––– g (oz)
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994
www.irf.com
1
07/04/07
Free Datasheet http://www.Datasheet4U.com
1 page  
500
VCGiesE
=
=
0V,
Cge
+
f = 1MHz
Cgc , Cce
SHORTED
400
CCroeess
=
=
CCgcec
+
Cgc
Cies
300
Coes
200
100 Cres
0
1 10 100
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
IRG4RC10SDPbF
20 VCC = 400V
I C = 8A
15
10
5
0
0 5 10 15 20
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
3.60 VCC = 480V
3.55
VGE
TJ
=
=
15V
25 °C
IC = 8A
3.50
3.45
3.40
3.35
3.30
0
20 40 60 80
RGRG, G, GataeteRReessisistatannccee((OΩh)m)
100
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
www.irf.com
100 RG =1O0h0mΩ
VGE = 15V
VCC = 480V
10
1
IC = 16A
IC= 8A
IC= 4A
0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
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5 Page 
IRG4RC10SDPbF
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 )
7.9 ( .312 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
13 INCH
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2007
www.irf.com
11
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| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRG4RC10SDPBF.PDF ] | |
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