|
|
Numéro de référence | EB102H | ||
Description | EB SERIES TRANSISTORS | ||
Fabricant | Shengyuan | ||
Logo | |||
Shenzhen Shengyuan Semiconductors Co., LTD.
EB SERIES TRANSISTORS
FEATURES HIGH VOLTAGE CAPABILITY
HIGH SPEED SWITCHING
APPLICATION: FLUORESCENT LAMP
ELECTRONIC BALLAST
Product Specification
EB102
WIDE SOA
Absolute Maximum Ratings Tc=25°C
PARAMETER
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Storage Temperature
Tstg
VALUE
600
400
9
0.6
8
150
-65-150
TO-92
UNIT
V
V
V
A
W
°C
°C
Electronic Characteristics Tc=25°C
CHARACTERISTICS
SYMBOL
Collector-Base Cutoff Current
ICBO
Collector-Emitter Cutoff Current
ICEO
Collector-Emitter Voltage
VCEO
Emitter- Base Voltage
VEBO
Collector-Emitter Saturation Voltage
Vces
Base-Emitter Saturation Voltage
Vbes
DC Current Gain
Storage Time
Falling Time
hFE
tS
tf
TEST CONDITION
VCB=600V
VCE=400V,IB=0
IC=10mA,IB=0
IE=1mA,IC=0
IC=0.1A,IB=10mA
IC=0.4A,IB=0.1A
IC=0.8A,IB=0.2A
IC=0.2A,IB=0.04A
VCE=5V,IC=1mA
VCE=5V,IC=0.1A
VCE=5V,IC=50mA
VCC=250V,
IC=5IB
IB1= -IB2=0.1A
MIN
400
9
8
12
8
MAX
100
250
0.5
1.2
1.0
1.2
UNIT
A
A
V
V
V
V
40
2.5
µS
0.8
Shengyuan semiconductors 2004.10
1
Free Datasheet http://www.Datasheet4U.com
|
|||
Pages | Pages 3 | ||
Télécharger | [ EB102H ] |
No | Description détaillée | Fabricant |
EB102 | Transistor | SYS Semiconductors |
EB102DL | Transistor | SY Semiconductors |
EB102H | EB SERIES TRANSISTORS | Shengyuan |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |