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Secos - PNP Silicon Plastic Encapsulated Transistor

Numéro de référence 2SA1832
Description PNP Silicon Plastic Encapsulated Transistor
Fabricant Secos 
Logo Secos 





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2SA1832 fiche technique
Elektronische Bauelemente
2SA1832
-0.15A , -50V
PNP Silicon Plastic Encapsulated Transistor
FEATURES
High Voltage and High Current
Excellent hFE Linearity
Complementary to 2SC4738
CLASSIFICATION OF hFE
Product-Rank 2SA1832-Y
Range
120~240
Marking
SY
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-523
2SA1832-GR
200~400
SG
A
M
3
Top View
CB
12
KL
E
3
1
2
D
F GH J
PACKAGE INFORMATION
Package
MPQ
SOT-523
3K
LeaderSize
7’ inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
1.5 1.7
1.45 1.75
0.75 0.85
0.7 0.9
0.9 1.1
0.15 0.25
REF.
G
H
J
K
L
M
Millimeter
Min. Max.
- 0.1
0.55 REF.
0.1 0.2
-
0.5 TYP.
0.25 0.325
Collector


Base
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
TJ, TSTG
Ratings
-50
-50
-5
-150
100
125
-55~125
Unit
V
V
V
mA
mW
°C / W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut - off Current
Emitter Cut - off Current
DC Current Gain
Collector to Emitter
Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
-50
-50
-5
-
-
120
-
80
-
Typ.
-
-
-
-
-
-
-
-
4
Max.
-
-
-
-100
-100
400
-0.3
-
7
Unit
V
V
V
nA
nA
V
MHz
pF
Test Conditions
IC= -100A, IE=0
IC= -1mA, IB=0
IE= -100A, IC=0
VCB= -50V, IE=0
VEB= -5V, IC=0
VCE= -6V, IC= -2mA
IC= -100mA, IB= -10mA
VCE= -10V, IC= -1mA
VCB= -10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
25-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
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