|
|
PDF A1832 Data sheet ( Hoja de datos )
| Número de pieza | A1832 | |
| Descripción | 50V, 150mA, PNP Transistor - 2SA1832 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de A1832 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1832
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = −50 V, IC = −150 mA (max)
• Excellent hFE linearity: hFE (IC = −0.1 mA)/ hFE (IC = −2 mA)
= 0.95 (typ.)
• High hFE: hFE = 70~400
• Complementary to 2SC4738
• Small package
2SA1832
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO −50 V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCEO
VEBO
IC
IB
PC
Tj
Tstg
−50
−5
−150
−30
100
125
−55~125
V
V
mA
mA
mW
°C
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2H1A
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 2.4 mg (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = −50 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat)
fT
IC = −100 mA, IB = −10 mA
VCE = −10 V, IC = −1 mA
Cob VCB = −10 V, IE = 0, f = 1 MHz
Note: hFE classification O (O): 70~140, Y (Y): 120~240, GR (G): 200~400
( ) marking symbol
Min Typ. Max Unit
⎯ ⎯ −0.1 μA
⎯ ⎯ −0.1 μA
70 ⎯ 400
⎯ −0.1 −0.3 V
80 ⎯ ⎯ MHz
⎯4
7 pF
Marking
1 2007-11-01
Free Datasheet http://www.Datasheet4U.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet A1832.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| A1830 | 400V, 2A, PNP Transistor - 2SA1830 |  Sanyo |
| A1831 | 800V, 20mA, PNP Transistor, 2SA1831 | Sanyo |
| A1832 | 50V, 150mA, PNP Transistor - 2SA1832 | Toshiba Semiconductor |
| A1834 | Double Triode ( 6.3V, Indirectly Heated ) |  Marconi |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |