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PDF FDPF33N25T Data sheet ( Hoja de datos )
| Número de pieza | FDPF33N25T | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDP33N25 / FDPF33N25T
250V N-Channel MOSFET
Features
• 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
• Low gate charge ( typical 36.8 nC)
• Low Crss ( typical 39 pF)
• Fast switching
• Improved dv/dt capability
October
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
FDP33N25 FDPF33N25T
250
33 33*
20.4 20.4*
132 132*
± 30
918
33
23.5
4.5
235 37
1.89 0.29
-55 to +150
300
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP33N25
0.53
0.5
62.5
FDPF33N25T
3.4
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDP33N25 / FDPF33N25T Rev. B
1
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve for FDP33N25
100
D=0.5
10-1 0.2
0.1
0.05
0.02
0.01
10-2
single pulse
PDM
t1
t2
* Notes :
1. Z (t) = 0.53 oC/W Max.
θJC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM C
DM θJC
10-5
10-4
10-3
10-2
10-1
100
101
t , Square Wave Pulse Duration [sec]
1
Figure 11-2. Transient Thermal Response Curve for FDPF33N25T
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2 single pulse
PDM
t1
t2
* Notes :
1. Z (t) = 3.4 oC/W Max.
θJC
2. Duty Factor, D=t /t
12
3. T - T = P * Z (t)
JM C
DM θJC
1 0 -5
10-4
1 0 -3
10-2
1 0 -1
100
t , Square W ave Pulse Duration [sec]
1
101
FDP33N25 / FDPF33N25T Rev. B
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet FDPF33N25T.PDF ] | |
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