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Numéro de référence | 2SC5171 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | INCHANGE | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High Transition Frenquency : fT=200MHz(Typ.)
·Complementary to 2SA1930
APPLICATIONS
·Power amplifier applications
·Driver stage amplifier applications
isc Product Specification
2SC5171
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
180 V
VCEO
Collector-Emitter Voltage
180 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2A
IB Base Current-Continuous
Pc
Collector Power Dissipation
@ TC=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
1A
20 W
150 ℃
-55~150 ℃
isc Website:www.iscsemi.cn
Free Datasheet http://www.Datasheet4U.com
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Pages | Pages 2 | ||
Télécharger | [ 2SC5171 ] |
No | Description détaillée | Fabricant |
2SC517 | NPN Transistor | ETC |
2SC5171 | NPN EPITAXIAL TYPE (POWER/ DRIVER STAGE AMPLIFIER APPLICATIONS) | Toshiba Semiconductor |
2SC5171 | Silicon NPN Power Transistor | INCHANGE |
2SC5172 | NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATIONS) | Toshiba Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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